We introduce a four-channel 0.6 μ m CMOS programmable weighting analog switch integrated circuit. Two high transconductance N-Channel MOSFETs are used for switching and weighting functions. 报道了0.6μMCMOS4路可编程加权高频模拟开关集成电路,其开关和加权功能分别由两个高跨导的N沟MOS晶体管实现。
The Taurus Workbench optimization of the integration n-channel MOS core technic parameter 集成化nMOS核心工艺参数的TaurusWorkbench优化
N-Channel MOS memories-new possibilities for microprocessor memory design MCM7001型N-沟道MOS随机存储器&为微型信息处理机存储器设计提供新的可能性
Dual-gate FET Mixers at X-band The Development of the N-channel Silicon Gate MOS Devices X波段双栅场效应晶体管混频器硅栅N沟道MOS场效应晶体管的研制
Optimization of Key Process Parameters for Submicron n-Channel MOS Transistors Based on Taurus Workbench 基于TaurusWorkbench的亚微米n沟MOS器件关键工艺参数的优化
This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. 该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。
The Development of the N-channel Silicon Gate MOS Devices Channelling investigation of As implanted Si crystals 硅栅N沟道MOS场效应晶体管的研制砷注入硅背散射沟道研究
In this dissertation, the effect of excited states on ionization of dopants, inversion-layer charge density of n-channel MOSFET and MOS capacitor is investigated. 本文集中研究了激发态对杂质电离、n-MOSFET反型层电荷和MOS电容的影响。